Power Tester
CTT3700 Power Tester
A high performance tester intended for mass-produced power semiconductor discrete devices
With test specification of 2000V/200A, it is applicable to CP tests, and the major devices it can test including MOSFET, IGBT, SiC MOS, and more. The tester has a 4-site parallel test structure.
CTT3700 Power Tester
Specifications
Features
1. Test specification of each test site is 2000V50A; 4-site parallel test is supported.
2. Floating source structure improves test accuracy and test stability.
3. Support mRdon dual chip tests and the test accuracy can reach 0.1mR.
4. Specialized leakage measuring loop and the measure accuracy can reach pA level.
5. Support DC+EAS+RgCg test.
6. Convenient online self check without connection to external self check board.
7. Support DPAT test.
8. Support SESE/GEM protocol.
Test Specification
2000V 200A
Maximum Number of Test Sites
4
Leakage Test Accuracy
0.1nA
Rdon Test Accuracy
0.1mR